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v23990-p869-f49/f48-pm preliminary datasheet flowpack 0 3rd gen 1200v/25a 2 clip housing in 12mm and 17mm height trench fieldstop igbt 4 technology compact and low inductance design built-in ntc motor drives power generation ups V23990-P869-F49-PM: 17mm height v23990-p869-f48-pm: 12mm height tj=25c, unless otherwise specified parameter symbol value unit inverter transistor t h =80c 28 t c =80c t h =80c 73 t c =80c t sc t j 150c 10 s v cc v ge =15v 800 v * it is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits inverter diode t h =80c 27 t c =80c t h =80c 51 t c =80c thermal properties t op operation junction temperature -40..+tjmax-25 c storage temperature t stg -40..+125 c w power dissipation per diode p tot dc forward current a t j =t jmax t p limited by t jmax a i f t j =t jmax t j =25c t j =t jmax t j =t jmax t p limited by t jmax v rrm maximum junction temperature power dissipation per igbt v ge t jmax p tot short circuit ratings* peak repetitive reverse voltage gate-emitter peak voltage a v c v types maximum ratings condition features flow0 housing target applications schematic i frm t jmax repetitive peak forward current 175 v 1200 collector-emitter voltage repetitive peak collector current dc collector current v ce i cpulse i c 1200 20 w a 175 maximum junction temperature c 75 50 copyright by vincotech 1 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition insulation properties v is t=2s dc voltage 4000 v min.12,7 mm min.12,7 mm clearance insulation voltage creepage distance copyright by vincotech 2 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 5 5,8 6,5 tj=150c tj=25c 1,91 2,4 tj=150c 2,33 tj=25c 10 tj=150c tj=25c 200 tj=150c tj=25c 130 tj=150c 127 tj=25c 26 tj=150c 32 tj=25c 220 tj=150c 286 tj=25c 77 tj=150c 118 tj=25c 2,001 tj=150c 3,002 tj=25c 1,32 tj=150c 2,16 thermal resistance chip to heatsink per chip r thjh thermal grease thickness50um = 0,61 w/mk 1,305 k/w tj=25c 1,87 2,35 tj=150c 1,80 tj=25c 10 tj=150c tj=25c 18,3 tj=150c 21,7 tj=25c 360 tj=150c 588 tj=25c 2,41 tj=150c 4,94 di(rec)max tj=25c 75 /dt tj=150c 48 reverse recovered energy e rec tj=150c 1,971 mws thermal resistance chip to heatsink per chip r thjh thermal grease thickness50um = 0,61 w/mk 1,851 k/w mws ns v a/ s c a nc ns pf 20,9 22 23,1 tj=25c tj=25c tj=100c tj=25c v 115 none tj=25c thermistor turn-on energy loss per pulse rated resistance r 25 k deviation of r100 r/r r100=1486 tol. 3% tol. 5% %/k b-value b (25/100) k power dissipation p mw 2,9 0,00085 600 1200 25 collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current integrated gate resistor collector-emitter saturation voltage inverter transistor gate emitter threshold voltage turn-off energy loss per pulse inverter diode c rss t r t d(off) t d(on) v ce(sat) i ces e off 25 c ies 25 f=1mhz rgon=32 15 rgoff=32 e on rgon=32 120 85 0 characteristic values value conditions c oss r gint i ges t f v ge(th) diode forward voltage gate charge 960 reverse leakage current q gate i r input capacitance output capacitance reverse transfer capacitance v f peak reverse recovery current reverse recovered charge reverse recovery time peak rate of fall of recovery current tj=25c 25 25 25 1430 15 600 q rr t rr i rrm vce=vge 0 15 0 20 15 210 4000 a v na copyright by vincotech 3 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) t p = 250 s t p = 250 s t j = 25 c t j = 150 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 output inverter igbt figure 4 output inverter fred typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) t p = 250 s t p = 250 s v ce = 10 v output inverter typical output characteristics 0 15 30 45 60 75 012345 v ce (v) ic (a) 0 5 10 15 20 25 30 024681 01 2 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 15 30 45 60 75 00,511,522,533,5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 15 30 45 60 75 012345 v ce (v) ic (a) copyright by vincotech 4 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) inductive load inductive load t j = 25/150 c t j = 25/150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 32 i c = 25 a r goff = 32 figure 7 output inverter igbt figure 8 output inverter igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) inductive load inductive load t j = 25/150 c t j = 25/150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 32 i c = 25 a output inverter e on e off e on: e off 0 1,5 3 4,5 6 7,5 0 1 02 03 04 05 0 i c (a) e (mws) e off e on e on e off 0 1,5 3 4,5 6 7,5 0 30 60 90 120 150 r g ( ) e (mws) e rec e rec 0 0,5 1 1,5 2 2,5 3 0 1 02 03 04 05 0 i c (a) e (mws) e rec e rec 0 0,5 1 1,5 2 2,5 0 30 60 90 120 150 r g ( ) e (mws) copyright by vincotech 5 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 9 output inverter igbt figure 10 output inverter igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) inductive load inductive load t j = 150 c t j = 150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 32 i c = 25 a r goff = 32 figure 11 output inverter fred figure 12 output inverter fred typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(i c ) t rr = f(r gon ) t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 v ge = 15 v output inverter t doff t f t don t r 0,001 0,01 0,1 1 0 1 02 03 04 05 0 i c (a) t ( s) t rr t rr 0 0,2 0,4 0,6 0,8 1 1,2 0 30 60 90 120 150 r gon ( ) t rr ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 30 60 90 120 150 r g ( ) t ( s) t rr t rr 0 0,2 0,4 0,6 0,8 1 0 1020304050 i c (a) t rr ( s) copyright by vincotech 6 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 13 output inverter fred figure 14 output inverter fred typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 v ge = 15 v figure 15 output inverter fred figure 16 output inverter fred typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 v ge = 15 v output inverter i rrm i rrm 0 10 20 30 40 50 60 0 30 60 90 120 150 r gon ( ) irr m (a) q rr q rr 0 1 2 3 4 5 6 0 30 60 90 120 150 r gon ( ) q rr ( c) i rrm i rrm 0 5 10 15 20 25 0 1020304050 i c (a) irr m (a) q rr q rr 0 2 4 6 8 0 1020304050 i c (a) q rr ( c) copyright by vincotech 7 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 17 output inverter fred figure 18 output inverter fred typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(i c )d i 0 /dt,di rec /dt = f(r gon ) t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 v ge = 15 v figure 19 output inverter igbt figure 20 output inverter fred igbt transient thermal impedance fred transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) d = t p / t d = t p / t r thjh = 1,31 k/w r thjh = 1,85 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,06 3,5e+00 0,04 9,4e+00 0,18 6,2e-01 0,19 8,3e-01 0,65 1,3e-01 0,80 1,3e-01 0,27 2,3e-02 0,50 2,9e-02 0,08 3,9e-03 0,19 4,5e-03 0,07 4,6e-04 0,13 4,9e-04 output inverter t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt di rec /dt 0 1000 2000 3000 4000 5000 0 30 60 90 120 150 r gon ( ) di rec / dt (a/ s) di 0 /dt di rec /dt 0 200 400 600 800 1000 1200 0 1 02 03 04 05 0 i c (a) di rec / dt (a/ s) copyright by vincotech 8 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 21 output inverter igbt figure 22 output inverter igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) t j = 175 c t j = 175 c v ge = 15 v figure 23 output inverter fred figure 24 output inverter fred power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) t j = 175 c t j = 175 c output inverter 0 30 60 90 120 150 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 30 0 50 100 150 200 th ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 30 35 0 50 100 150 200 th ( o c) i f (a) copyright by vincotech 9 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 25 output inverter igbt figure 26 output inverter igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(q g ) d = single pulse i c = 25 a t h = 80 oc v ge = 15 v t j =t jmax oc figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) output inverter thermistor ntc-typical temperature characteristic 0 5000 10000 15000 20000 25000 25 50 75 100 125 t (c) r/ v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100m dc 10 0 10 3 10us 0 2,5 5 7,5 10 12,5 15 17,5 0 25 50 75 100 125 qg (nc) v ge (v) 240 v 960 v copyright by vincotech 10 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet t j 150 c r g on 32 r goff 32 figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 25 a i c (100%) = 25 a t doff = 0,29 s t don = 0,13 s t eoff = 0,62 s t eon = 0,45 s figure 3 output inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 25 a i c (100%) = 25 a t f = 0,12 s t r = 0,03 s switching definitions output inverter general conditions = = = i c 1% u ce 90% u ge 90% -40 -20 0 20 40 60 80 100 120 140 -0,2 -0,05 0,1 0,25 0,4 0,55 0,7 0,85 time (us) % t doff t eoff u ce i c u ge i c10% u ge10% t don u ce3% -40 0 40 80 120 160 200 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 3,6 time(us) % i c u ce t eon u ge fitted i c10% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 140 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 time (us) % u ce i c t f i c10% i c90% -40 0 40 80 120 160 200 2,9 3 3,1 3,2 3,3 3,4 3,5 time(us) % t r u ce i c copyright by vincotech 11 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 15,10 kw p on (100%) = 15,10 kw e off (100%) = 2,16 mj e on (100%) = 3,00 mj t eoff = 0,62 s t eon = 0,45 s figure 7 output inverter fred figure 8 output inverter igbt gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t r r v geoff = -15 v v d (100%) = 600 v v geon = 15 v i d (100%) = 25 a v c (100%) = 600 v i rrm (100%) = -22 a i c (100%) = 25 a t rr = 0,59 s q g = 678 nc switching definitions output inverter i c 1% u ge90% -20 0 20 40 60 80 100 120 -0,3 -0,1 0,1 0,3 0,5 0,7 0,9 time (us) % p of f e off t eoff u ce3% u ge10% -20 20 60 100 140 180 2,8 2,95 3,1 3,25 3,4 3,55 3,7 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 qg (nc) uge (v) i rrm10% i rrm90% i rrm100% t rr -120 -80 -40 0 40 80 120 2,8 3 3,2 3,4 3,6 3,8 4 4,2 time(us) % i d u d fitted copyright by vincotech 12 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet figure 9 output inverter fred figure 10 output inverter fred turn-on switching waveforms & definition of t qr r turn-on switching waveforms & definition of t erec (t qrr = integrating time for q r r )( t erec = integrating time for e rec ) i d (100%) = 25 a p rec (100%) = 15,10 kw q rr (100%) = 4,94 c e rec (100%) = 1,97 mj t qrr = 0,90 s t erec = 0,90 s switching definitions output inverter t qrr -100 -50 0 50 100 150 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 time(us) % i d q r r -20 0 20 40 60 80 100 120 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 time(us) % p rec e rec t erec copyright by vincotech 13 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet package outline and pinout outline pinout copyright by vincotech 14 revision: 1
v23990-p869-f49/f48-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to impr ove design. the data contained is exclusively intended for technically trained staff. target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright by vincotech 15 revision: 1

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